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FDD6690A
February 1999 PRELIMINARY
FDD6690A
N-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.
Features * * *
46 A, 30 V. RDS(ON) = 0.012 @ VGS = 10 V RDS(ON) = 0.016 @ VGS = 4.5 V. Low gate charge (17nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON).
Applications * *
DC/DC converter Motor drives
*
D
D G S
TO-252
S
TA=25 C unless otherwise noted
o
G
Absolute Maximum Ratings
Symbol
VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current PD - Continuous - Pulsed
Parameter
Ratings
30
(Note 1) (Note 1a)
Units
V V A
20 46 12 100 50 2.8 1.3 -55 to +150
Maximum Power Dissipation @ TC = 25oC TA = 25oC T A = 25oC
(Note 1) (Note 1a) (Note 1b)
W
TJ, Tstg
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
2.5 96
C/W C/W
Package Marking and Ordering Information
Device Marking FDD6690A
(c)1999 Fairchild Semiconductor Corporation
Device FDD6690A
Reel Size 13''
Tape width 16mm
Quantity 2500
FDD6690A, Rev. B2
FDD6690A
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
(Note 1)
Min
Typ
Max
150 46
Units
mJ A
Drain-Source Avalanche Ratings
W DSS IAR
Single Pulse Drain-Source VDD = 15 V, ID = 46 A Avalanche Energy Maximum Drain-Source Avalanche Current
Off Characteristics
BVDSS BVDSS TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
(Note 2)
VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 0 V VGS = 20V, VDS = 0 V VGS = -20 V, VDS = 0 V
30 25 1 100 -100
V mV/C A nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, ID = 12 A VGS = 10 V, ID = 12 A,TJ=125C VGS = 4.5 V, ID =10 A VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 12 A
1
1.6 -4 .0009 .0015 .0120
3
V mV/C
0.012 0.019 0.016
ID(on) gFS
On-State Drain Current Forward Transconductance
50 44
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 15 V, VGS = 0 V, f = 1.0 MHz
1700 340 140
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6
10 12 35 10
18 22 56 18 23
ns ns ns ns nC nC nC
VDS = 15 V, ID = 12 A, VGS = 5 V,
17 5 6
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.3 A
(Note 2)
2.3 0.72 1.3
A V
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab. RJC is guaranteed by design while RCA is determined by the user's board design.
a) RJA= 45oC/W when mounted on a 1in2 pad of 2oz copper.
b) RJA= 96oC/W on a minimum mounting pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
FDD6690A, Rev. B2
FDD6690A
Typical Characteristics
40 VGS = 10V 30 3.5V 20 6.0V 4.5V 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A)
2.6 2.4 2.2 2 1.8 1.6 4.0V 1.4 1.2 1 0.8 0 0.5 1 1.5 2 2.5 3 0 10 20 ID, DRAIN CURRENT (A) 30 40 VDS, DRAIN-SOURCE VOLTAGE (V) 4.5V 5.0V 7.0V 10V 3.5V VGS = 3.0V
10 2.5V 0
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.04 RDS(ON), ON-RESISTANCE (OHM)
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100
o
ID = 12A VGS = 10V
ID = 6 A 0.035 0.03 0.025 0.02 0.015 0.01 0.005 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
o
TA = 125 C
o
TA = 25 C
125
150
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
40 35 ID, DRAIN CURRENT (A) 30 25 20 15 10 5 0 1 2 3 4 5 TA = -55 C
o o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 IS , REVERSE DRAIN CURRENT (A)
VDS = 5V
25 C 125 C
o
VGS = 0V 10 TA = 125 C 1 25 C 0.1 -55 C 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2
o o o
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDD6690A, Rev. B2
FDD6690A
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 12A 8
(continued)
2500 VDS = 5V 15V CAPACITANCE (pF) 10V 2000 CISS 1500 f = 1MHz VGS = 0 V
6
4
1000
2
500 COSS CRSS 0 5 10 15 20 25 30
0 0 5 10 15 20 25 30 35
0 Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
100 100s 1ms 10ms 100ms 1S 10S DC VGS = 10V SINGLE PULSE RJA = 96 C/W TA = 25 C 0.01 0.01 0.1 1 10 100
o o
60 SINGLE PULSE RJA = 96 C/W TA = 25 C POWER (W) 40
o o
ID, DRAIN CURRENT (A)
10
RDS(ON) LIMIT
1
20
0.1
0 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2
0.1
0.1 0.05 0.01
R JA (t) = r(t) * R JA R JA = 96C/W
0.02 Single Pulse P(pk)
0.01
t1
t2
0.001
TJ - TA = P * R JA (t) Duty Cycle, D = t 1 / t 2
0.0001 0.0001
0.001
0.01
0.1 t , TIME (sec) 1
1
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design.
FDD6690A, Rev. B2
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM
UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

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